Double-sided integrated circuit module having an exposed semiconductor die

ABSTRACT

The present disclosure relates to a double-sided integrated circuit (IC) module, which includes an exposed semiconductor die on a bottom side. A double-sided IC module includes a module substrate with a top side and a bottom side. Electronic components are mounted to each of the top side and the bottom side. Generally, the electronic components are encapsulated by a mold compound. In an exemplary aspect, a portion of the mold compound on the bottom side of the module substrate is removed, exposing a semiconductor die surface of at least one of the electronic components.

FIELD OF THE DISCLOSURE

The present disclosure relates to integrated circuit (IC) modules forelectronic devices, and more particularly to double-sided IC modules forradio frequency (RF) applications.

BACKGROUND

Many electronic devices include multiple components, includingintegrated circuit (IC) modules. Such components are often mounted tocircuit boards in order to provide various functionalities. TraditionalIC modules include a substrate on which multiple IC components (e.g.,semiconductor dice) are mounted. As electronic devices have becomesmaller, demand for more compact IC modules has increased.

One solution to forming compact electronic devices has been to formdouble-sided IC modules. A double-sided IC module mounts IC componentsto both of a top side and a bottom side of the module's substrate.However, electronic devices continue to drive further reductions in ICmodule size.

SUMMARY

The present disclosure relates to a double-sided integrated circuit (IC)module having an exposed semiconductor die. The double-sided IC moduleincludes a module substrate with a top side and a bottom side.Electronic components are mounted to each of the top side and the bottomside. Generally, the electronic components are encapsulated by a moldcompound. In an exemplary aspect, a portion of the mold compound on thebottom side is removed, exposing a semiconductor die surface of at leastone of the electronic components.

Exposing the semiconductor die reduces an overall thickness of thedouble-sided IC module. In addition, exposing the semiconductor die canprovide additional advantages, such as by providing a surface to which aheat exchange device can be coupled (e.g., to transfer heat away fromthe semiconductor die). In other examples, electrical, magnetic, orother connections can be formed between the semiconductor die and otherelectronic components through the exposed surface.

In an exemplary aspect, a radio frequency (RF) module is provided. TheRF module includes a module substrate defining a top side and a bottomside. A plurality of electronic components is coupled to the top sideand a semiconductor die coupled to the bottom side. The RF module alsoincludes a first mold compound coupled to the semiconductor die andexposing a surface of the semiconductor die.

Another exemplary aspect relates to a method for assembling a RF module.The method includes the operations of coupling an electronic componentto a top side of a module substrate and coupling a semiconductor die toa bottom side of the module substrate. The method also includesencapsulating the semiconductor die in a mold compound such that themold compound at least partially surrounds the semiconductor die andremoving a portion of the mold compound to expose a surface of thesemiconductor die.

Another exemplary aspect relates to an electronic device. The electronicdevice includes a circuit board on which a plurality of electroniccomponents is mounted and an IC module coupled to the circuit board. TheIC module includes a module substrate having a top side and a bottomside adjacent the circuit board. The IC module also includes a firstelectronic component coupled to the top side and a second electroniccomponent coupled to the bottom side. The IC module also includes a moldcompound at least partially surrounding the second electronic componentand exposing a surface of the second electronic component.

Those skilled in the art will appreciate the scope of the presentdisclosure and realize additional aspects thereof after reading thefollowing detailed description of the preferred embodiments inassociation with the accompanying drawing figures.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

The accompanying drawing figures incorporated in and forming a part ofthis specification illustrate several aspects of the disclosure, andtogether with the description serve to explain the principles of thedisclosure.

FIG. 1 illustrates an electronic device, which includes an integratedcircuit (IC) module coupled to a circuit board.

FIG. 2 illustrates the electronic device of FIG. 1 having a portion ofthe first mold compound on a bottom side of the IC module removed,exposing a semiconductor die surface of at least one bottom electroniccomponent.

FIG. 3A illustrates an exemplary bottom view of the IC module of FIG. 2prior to encapsulating the bottom electronic components in the firstmold compound.

FIG. 3B illustrates another exemplary bottom view of the IC module ofFIG. 2 with the bottom electronic components encapsulated in the firstmold compound.

FIG. 3C illustrates another exemplary bottom view of the IC module ofFIG. 2 after a portion of the first mold compound is removed to exposethe semiconductor die surface.

FIG. 4A illustrates an exemplary electronic device as in FIG. 2, havinga device mounted to the exposed semiconductor die surface.

FIG. 4B illustrates an exemplary electronic device as in FIG. 2, havinganother device mounted to the exposed semiconductor die surface.

FIG. 4C illustrates an exemplary electronic device as in FIG. 2, havinganother device mounted to the exposed semiconductor die surface.

FIG. 4D illustrates an exemplary electronic device as in FIG. 2, havinga connection formed between the exposed semiconductor die surface andthe circuit board.

FIG. 4E illustrates an exemplary electronic device as in FIG. 2, havinganother connection formed between the exposed semiconductor die surfaceand the circuit board.

FIG. 4F illustrates an exemplary electronic device as in FIG. 2, havingvariations in its components.

DETAILED DESCRIPTION

The embodiments set forth below represent the necessary information toenable those skilled in the art to practice the embodiments andillustrate the best mode of practicing the embodiments. Upon reading thefollowing description in light of the accompanying drawing figures,those skilled in the art will understand the concepts of the disclosureand will recognize applications of these concepts not particularlyaddressed herein. It should be understood that these concepts andapplications fall within the scope of the disclosure and theaccompanying claims.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of the present disclosure. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

It will be understood that when an element such as a layer, region, orsubstrate is referred to as being “on” or extending “onto” anotherelement, it can be directly on or extend directly onto the other elementor intervening elements may also be present. In contrast, when anelement is referred to as being “directly on” or extending “directlyonto” another element, there are no intervening elements present.Likewise, it will be understood that when an element such as a layer,region, or substrate is referred to as being “over” or extending “over”another element, it can be directly over or extend directly over theother element or intervening elements may also be present. In contrast,when an element is referred to as being “directly over” or extending“directly over” another element, there are no intervening elementspresent. It will also be understood that when an element is referred toas being “connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present.

Relative terms such as “below” or “above” or “upper” or “lower” or“horizontal” or “vertical” may be used herein to describe a relationshipof one element, layer, or region to another element, layer, or region asillustrated in the Figures. It will be understood that these terms andthose discussed above are intended to encompass different orientationsof the device in addition to the orientation depicted in the Figures.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the disclosure.As used herein, the singular forms “a,” “an,” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises,”“comprising,” “includes,” and/or “including” when used herein specifythe presence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms used herein should be interpreted ashaving a meaning that is consistent with their meaning in the context ofthis specification and the relevant art and will not be interpreted inan idealized or overly formal sense unless expressly so defined herein.

The present disclosure relates to a double-sided integrated circuit (IC)module having an exposed semiconductor die. The double-sided IC moduleincludes a module substrate with a top side and a bottom side.Electronic components are mounted to each of the top side and the bottomside. Generally, the electronic components are encapsulated by a moldcompound. In an exemplary aspect, a portion of the mold compound on thebottom side is removed, exposing a semiconductor die surface of at leastone of the electronic components.

Exposing the semiconductor die reduces an overall thickness of thedouble-sided IC module. In addition, exposing the semiconductor die canprovide additional advantages, such as by providing a surface to which aheat exchange device can be coupled (e.g., to transfer heat away fromthe semiconductor die). In other examples, electrical, magnetic, orother connections can be formed between the semiconductor die and otherelectronic components through the exposed surface.

In this regard, FIG. 1 illustrates an electronic device 10, whichincludes an IC module 12 coupled to a circuit board 14. For the purposeof this illustration, the IC module 12 is a shielded double-sided ICmodule, which includes a module substrate 16, a first top electroniccomponent 18, a second top electronic component 20, a third topelectronic component 22, a first bottom electronic component 24, and asecond bottom electronic component 26. Each of the bottom electroniccomponents 24, 26 is encapsulated by a first mold compound 28, and eachof the top electronic components 18, 20, 22 is encapsulated by a secondmold compound 30. As depicted, a shielding structure 32 can at leastpartially surround the IC module 12, and module contacts 34 couple theIC module 12 to the circuit board 14.

In further detail, the first bottom electronic component 24, the secondbottom electronic component 26, and the module contacts 34 are attachedto a bottom side 36 of the module substrate 16. In differentapplications, the IC module 12 may include fewer or more bottomelectronic components 24, 26. Each of the bottom electronic components24, 26 may be a flip-chip die, a wire-bonding die, a surface mounteddevice (SMD), an inductor, or other active or passive component. In anexemplary aspect, at least one of the bottom electronic components 24,26 includes a semiconductor die.

The module contacts 34 are conductive and may be solder bumps or copperpillars forming an electrical connection with the circuit board 14(e.g., connecting the top electronic components 18, 20, 22 and/or thebottom electronic components 24, 26 to other devices mounted on thecircuit board 14). Each of the module contacts 34 can be used forgrounded signals or non-grounded signals, and at least some of themodule contacts 34 may be electrically isolated from other modulecontacts 34. The first mold compound 28 resides over the bottom side 36of the module substrate 16 and encapsulates the first bottom electroniccomponent 24 and the second bottom electronic component 26. Each modulecontact 34 is taller than the bottom electronic components 24, 26 andexposed through the first mold compound 28. The first mold compound 28may be an organic epoxy resin or similar material. In an exemplaryaspect, the first mold compound 28 is a 20 micron (μm) top cut material.

The first top electronic component 18 and the second top electroniccomponent 20 are attached to a top side 38 of the module substrate 16.In different applications, the IC module 12 may include fewer or moretop electronic components 18, 20. Each of the first top electroniccomponent 18 and the second top electronic component 20 may be aflip-chip die, a wire-bonding die, a SMD, an inductor, or other activeor passive component. The second mold compound 30 resides over the topside 38 of the module substrate 16 and encapsulates the first topelectronic component 18 and the second top electronic component 20. Thesecond mold compound 30 may be formed from a same or different materialas the first mold compound 28.

As shown in FIG. 1, a top surface 40 of the IC module 12 is defined by atop surface of the second mold compound 30 (e.g., a surface opposite themodule substrate 16). A side surface 42 of the IC module 12 is definedby a side surface of the second mold compound 30, a side surface of themodule substrate 16, and a side surface of the first mold compound 28.The shielding structure 32 (e.g., shield layer) entirely covers the topsurface 40 of the IC module 12 and entirely or almost entirely coversthe side surface 42 of the IC module 12. The shielding structure 32 doesnot cover a bottom side of the IC module 12, which couples to thecircuit board 14. Herein and hereafter, entirely covering a surfacerefers to covering at least 99% of the surface, while almost entirelycovering a surface refers to covering at least 90% of the surface.

The shielding structure 32 can include a single layer of material, or itcan include multiple layers of the same or different materials. Forexample, an interior layer (e.g., covering the top surface 40 and theside surface 42 of the IC module 12) may be formed of copper, aluminum,silver, gold, or other conductive materials with a thickness between 3μm and 16 μm. An exterior layer may reside over the interior layer, andmay be formed of nickel with a thickness between 1 μm and 3 μm.

Further, the module substrate 16 may be a laminate having a number oflayers 44. These layers 44 of the module substrate 16 may includeprepreg material. The module substrate 16 can also include conductiveelements 46 and via structures 48, which may be formed of an appropriateconductive material. Generally, the conductive elements 46 and the viastructures 48 form electrical connections between one or more of theelectronic components 18, 20, 22, 24, 26 and the circuit board 14.

In an exemplary aspect, shown in FIG. 2, a portion of the first moldcompound 28 on a bottom side of the IC module 12 is removed, exposing asemiconductor die surface 50, 52 of at least one of the bottomelectronic components 24, 26. In some cases, the exposed semiconductordie surface 50, 52 is a bottom surface of the bottom electroniccomponent 24, 26 facing opposite the module substrate 16. Thus a bottomsurface 54 of the IC module 12 is defined by the semiconductor diesurface(s) 50, 52 and a bottom surface of the first mold compound 28. Insome examples, one of the semiconductor die surfaces 50, 52 is exposed(e.g., the semiconductor die surface 50, 52 further below the modulesubstrate 16), while in other examples two or more semiconductor diesurfaces 50, 52 are exposed.

In detail, the IC module 12 may be a radio frequency (RF) module,providing processing, signal conditioning, controls, and/or similarfunctions for RF signals of the electronic device 10. Accordingly, thetop electronic components 18, 20, 22 and bottom electronic components24, 26 of the RF module 12 may be configured for RF operation. Each ofthe electronic components 18, 20, 22, 24, 26 and the module contacts 34are mounted to the module substrate 16 through an appropriate technique.For example, the first top electronic component 18 and the third topelectronic component 22 are each a SMD which is mounted by solder,reflow, an adhesive, or similar technique. The second top electroniccomponent 20, the first bottom electronic component 24, and the secondbottom electronic component 26 are each a semiconductor die (e.g., aflip-chip die or a wire-bonding die) mounted to the module substrate 16through a set of solder bumps 56 or similar conductive elements (e.g.,through a reflow process). It should be understood that the mounting ofthe electronic components 18, 20, 22, 24, 26 is shown for illustrativepurposes, and each component may be mounted differently in differentapplications.

The first mold compound 28 is applied over the bottom side 36 of themodule substrate 16 to encapsulate each bottom electronic component 24,26 as depicted in FIG. 1, and removed to expose at least onesemiconductor die surface 50, 52 as depicted in FIG. 2. The first moldcompound 28 may be applied by various procedures, such as sheet molding,overmolding, compression molding, transfer molding, dam fillencapsulation, or screen print encapsulation. In an exemplary aspect, ifthere is space between the bottom side 36 of the module substrate 16 anda bottom electronic component 24, 26, the first mold compound 28 fillsthe space. A curing process hardens the first mold compound 28.

Similarly, the second mold compound 30 is applied over the top side 38of the module substrate 16 to encapsulate each top electronic component18, 20, 22. The second mold compound 30 may be the same or a differentmaterial as the first mold compound 28, and may be applied through thesame or a different technique. In some cases, both the first moldcompound 28 and the second mold compound 30 are applied in a sameprocess, and in other cases the first mold compound 28 and the secondmold compound 30 are applied in separate processes.

By removing a portion of the first mold compound 28 to expose at leastone semiconductor die surface 50, 52, a height H of the module contacts34 can be reduced. In addition, an overall thickness T of the IC module12 is reduced. In an exemplary aspect, a thickness of each bottomelectronic component 24, 26 is between 40 μm and 150 μm thick, and athickness of the first mold compound 28 (e.g., a distance between thebottom surface 54 of the IC module 12 and the bottom side 36 of themodule substrate 16) is between 80 μm and 200 μm. In addition, theheight H of the module contacts 34 is between 100 and 300 μm prior toattachment to the circuit board 14.

The process of exposing the semiconductor die surface 50, 52 is furtherillustrated in FIGS. 3A-3C. In addition, exposing the semiconductor diesurface 50, 52 can provide additional advantages, such as by providing asurface for coupling a device to the bottom electronic component 24, 26or by facilitating connections between the bottom electronic component24, 26 and the circuit board 14, as discussed further with respect toFIGS. 4A-4E. It should be understood that variations in components ofthe IC module 12 are contemplated, as depicted in FIG. 4F.

FIGS. 3A-3C provide exemplary steps that illustrate a process tofabricate the IC module 12 shown in FIG. 2 having the exposedsemiconductor die surface 50, 52. Although the exemplary steps areillustrated in a series, the exemplary steps are not necessarily orderdependent. Some steps may be done in a different order than thatpresented. Further, processes within the scope of this disclosure mayinclude fewer or more steps than those illustrated in FIGS. 3A-3C. FIG.3A illustrates an exemplary bottom view of the IC module 12 of FIG. 2prior to encapsulating the bottom electronic components 24, 26 in thefirst mold compound 28. FIG. 3B illustrates another exemplary bottomview of the IC module 12 of FIG. 2 with the bottom electronic components24, 26 encapsulated in the first mold compound 28. FIG. 3C illustratesanother exemplary bottom view of the IC module 12 of FIG. 2 after aportion of the mold compound 28 is removed to expose the semiconductordie surface 50, 52.

The first bottom electronic component 24, the second bottom electroniccomponent 26, and the module contacts 34 are attached at the bottom side36 of the module substrate 16 as depicted in FIG. 3A. In differentapplications, there may be more or fewer bottom electronic components24, 26 or more or fewer module contacts 34 attached to the modulesubstrate 16. Some module contacts 34 may be used for grounded signals,and may be electrically isolated from other module contacts 34 which areused for non-grounded signals. Herein, the module contacts 34 are tallerthan the first bottom electronic component 24 and the second bottomelectronic component 26.

After the first bottom electronic component 24, the second bottomelectronic component 26, and the module contacts 34 are attached, thefirst mold compound 28 is applied to the IC module 12 as depicted inFIG. 3B. The first mold compound 28 resides over the bottom side 36 ofthe module substrate 16 to encapsulate each bottom electronic component24, 26 and each module contact 34. In some examples, the bottomelectronic components 24, 26 and the module contacts 34 are entirelyencapsulated, and in other embodiments, the module contacts 34 are onlypartially encapsulated. As described above, the first mold compound 28may be applied by various procedures. In an exemplary aspect, the firstmold compound 28 is overmolded. A curing process hardens the first moldcompound 28.

After the first mold compound 28 is applied and cured, a portion of thefirst mold compound 28 is removed to expose the at least onesemiconductor die surface 50, 52 of the bottom electronic components 24,26 as depicted in FIG. 3C. The removal of the portion of the first moldcompound 28 may be done with a mechanical grinding process, a chemicalremoval process, a laser ablation, or other appropriate technique. Afterthe removal process, the bottom surface 54 of the IC module 12 isdefined by the semiconductor die surface(s) 50, 52 and a bottom surfaceof the first mold compound 28. In some applications, the bottom surface54 is a common plane at and around the semiconductor die surface(s) 50,52.

Exposure of the semiconductor die surface 50, 52 can provide additionaladvantages, such as by providing a surface for coupling a device to oneor more of the bottom electronic components 24, 26 as depicted in FIGS.4A-4C. The exposed semiconductor die surface 50, 52 can also facilitateconnections between at least one of the bottom electronic components 24,26 and the circuit board 14, as depicted in FIGS. 4D and 4E. Variationsin the components of the IC module 12 are contemplated, such as depictedin FIG. 4F.

FIG. 4A illustrates an exemplary electronic device 10 as in FIG. 2,having a device mounted to the exposed semiconductor die surface 50, 52.In some examples, one or more of the bottom electronic components 24, 26may benefit from direct heat transfer, such as heat dissipation. In suchexamples, a heat exchanger 58 may be coupled to the exposedsemiconductor die surface(s) 50, 52 of the bottom electroniccomponent(s) 24, 26. This can improve the performance of the bottomelectronic component(s) 24, 26 and/or prevent damage to the bottomelectronic component(s) 24, 26 during operation. The heat exchanger 58may be mounted to the bottom electronic component(s) 24, 26 and/or thefirst mold compound 28 through an adhesive material (e.g., a thermaladhesive) or another appropriate technique.

In other examples, one or more of the bottom electronic components 24,26 may include a sensor (e.g., a temperature sensor, a pressure sensor,and so on) or other device, as depicted in FIGS. 4B and 4C. In anexemplary aspect, a separate sensor substrate 60 (e.g., a conductivematerial, an optical material, and so on) can be coupled to each bottomelectronic component 24, 26 including a sensor as depicted in FIG. 4B.In another aspect, the sensor substrate 60 can be coupled to more thanone bottom electronic component 24, 26 as depicted in FIG. 4C. Thesensor substrate 60 can facilitate operation of the sensor. In someexamples, the sensor substrate 60 may be omitted and the sensor in thebottom electronic component 24, 26 can perform its operations directly.

FIG. 4D illustrates an exemplary electronic device 10 as in FIG. 2,having a connection formed between the exposed semiconductor die surface50, 52 and the circuit board 14. In some examples, a conductive pad 62is coupled to the semiconductor die surface 50, 52 and a correspondingconductive pad 64 is coupled to the circuit board 14. The conductive pad62 and/or the corresponding conductive pad 64 can be an exposed orinsulated trace, pad, coil, or another shape. The conductive pad 62 andthe corresponding conductive pad 64 can exchange signals and/or powerthrough an indirect electromagnetic technique, such as inducingelectrical signals through electrical, magnetic, capacitive, orinductive techniques. In some examples, the conductive pad 62 can beincluded within the bottom electronic component 24, 26 rather thancoupled to the semiconductor die surface 50, 52.

In other examples, a direct electrical connection may be formed betweenone or more of the bottom electronic components 24, 26 and the circuitboard 14 through the exposed semiconductor die surface 50, 52 asillustrated in FIG. 4E. For example, one or more conductors 66 can becoupled between the semiconductor die surface 50, 52 and the circuitboard 14. The conductors 66 can be deposited on or coupled to each ofthe semiconductor die surface 50, 52 and the circuit board 14 throughsoldering, an adhesive (e.g., a conductive adhesive), vapor deposition,printing, and similar techniques. The conductors 66 can facilitate anexchange of power and/or signals between the bottom electroniccomponent(s) 24, 26 and one or more devices coupled to the circuit board14 (not shown).

Those skilled in the art will recognize improvements and modificationsto the preferred embodiments of the present disclosure. All suchimprovements and modifications are considered within the scope of theconcepts disclosed herein and the claims that follow.

For example, FIG. 4F illustrates an exemplary electronic device 10 as inFIG. 2, having variations in its components. In particular, the ICmodule 12 may include modules contacts 34 a, 34 b having differentshapes. For example, one or more of the module contacts 34 a may have asubstantially planar surface attached to the bottom side 36 of themodule substrate 16. In other examples, one or more of the modulecontacts 34 b may include a notched or otherwise irregular surfaceattached to the bottom side 36 of the module substrate 16. As describedabove, the module contacts 34 a, 34 b may be solder bumps or copperpillars forming an electrical connection with the circuit board 14. Thesurfaces of the module contacts 34 a, 34 b attached to the bottom side36 of the module substrate 16 may be machined, molded, or otherwiseformed as depicted in FIG. 4F. It should be understood that othervariations and modifications of the IC module 12 and its components arealso contemplated herein.

1. A radio frequency (RF) module, comprising: a module substratedefining a top side and a bottom side; a plurality of electroniccomponents coupled to the top side; a semiconductor die coupled to thebottom side; and a first mold compound coupled to the semiconductor dieand exposing a surface of the semiconductor die.
 2. The RF module ofclaim 1, wherein the surface of the semiconductor die is a bottomsurface of the semiconductor die facing opposite the module substrate.3. The RF module of claim 1, wherein the semiconductor die is coupled tothe module substrate via a plurality of conductive elements.
 4. The RFmodule of claim 3, wherein the first mold compound surrounds each of theplurality of conductive elements.
 5. The RF module of claim 1, whereinthe first mold compound and the surface of the semiconductor die definea common plane.
 6. The RF module of claim 5, further comprising aplurality of module contacts extending below the common plane, whereinat least one of the plurality of module contacts is configured toprovide an electrical connection between the module substrate and asecondary substrate.
 7. The RF module of claim 5, wherein a distancebetween the common plane and the bottom side of the module substrate isbetween 80 μm and 200 μm.
 8. The RF module of claim 1, furthercomprising a second mold compound coupled to the top side andencapsulating the plurality of electronic components.
 9. The RF moduleof claim 8, further comprising a shield layer at least partiallysurrounding the second mold compound.
 10. The RF module of claim 1,further comprising a heat exchanger coupled to the surface of thesemiconductor die and configured to exchange heat with the semiconductordie.
 11. A method for assembling a radio frequency (RF) module,comprising: coupling an electronic component to a top side of a modulesubstrate; coupling a semiconductor die to a bottom side of the modulesubstrate; encapsulating the semiconductor die in a mold compound suchthat the mold compound at least partially surrounds the semiconductordie; and removing a portion of the mold compound to expose a surface ofthe semiconductor die.
 12. The method of claim 11, wherein removing theportion of the mold compound exposes a bottom surface of thesemiconductor die facing opposite the module substrate.
 13. The methodof claim 11, wherein coupling the semiconductor die to the bottom sideof the module substrate further comprises coupling a plurality ofconductive elements between the semiconductor die and the bottom side ofthe module substrate.
 14. The method of claim 13, wherein encapsulatingthe semiconductor die in the mold compound comprises at least partiallysurrounding each of the plurality of conductive elements.
 15. The methodof claim 11, wherein removing the portion of the mold compound forms aplanar bottom module surface defined by the mold compound and thesurface of the semiconductor die.
 16. The method of claim 15, wherein:removing the portion of the mold compound further exposes a plurality ofmodule contacts extending below the planar bottom module surface; andthe method further comprises coupling the plurality of module contactsto a secondary substrate.
 17. The method of claim 15, further comprisingcoupling a heat exchanger to the planar bottom module surface such thatthe heat exchanger is configured to exchange heat with the semiconductordie.
 18. An electronic device, comprising: a circuit board on which aplurality of electronic components is mounted; and an integrated circuit(IC) module coupled to the circuit board, comprising: a module substratehaving a top side and a bottom side adjacent the circuit board; a firstelectronic component coupled to the top side; a second electroniccomponent coupled to the bottom side; and a mold compound at leastpartially surrounding the second electronic component and exposing asurface of the second electronic component.
 19. The electronic device ofclaim 18, wherein: the mold compound and the surface of the secondelectronic component define a common plane facing the circuit board; theelectronic device further comprises a plurality of module contactsextending below the common plane and coupled to the circuit board; andat least one of the plurality of module contacts provides an electricalconnection between the module substrate and an electronic component ofthe plurality of electronic components.
 20. The electronic device ofclaim 19, wherein a distance between the common plane and the bottomside of the module substrate is between 80 μm and 200 μm.